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산업용 측정 장비 · 제어 부품 · 글로벌 브랜드 통합 쇼핑몰
산업용 측정 장비 · 제어 부품 · 글로벌 브랜드 통합 쇼핑몰
저온 실리콘 다이오드 온도 센서
필터 또는 검색 기능을 사용하여 원하시는 모델을 찾으십시오.
총 23개의 상품 · 1 - 20 표시
| 제품 번호 / 가격 | Brand | Accuracy Band Availability | Applications | Band Type | Current, Max Note | Mounting | Number of Wires | Output Signal | Process Temperature, Max | Process Temperature, Min | Recommended Excitation | Repeatability | Reverse Voltage | Sensor Height | Sensor Inner Dia | Sensor Length | Sensor Threads | Sensor Width | Supply Power Effects | Temperature Sensor Type | Thermal Response Time | Use in Magnetic Field Note | Use in Radiation Note | Wire Diameter | Wire Length | Sensor Wire Length | Sensor Diameter | Wire Gauge | 수량 / 장바구니 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CY670D-LR1,482,520 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band D | 1 mA, continuous or 100 mA, pulsed | Half rounded cylinder | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 2.661 mm | - | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | 3.099 mm | - | |
CY670D-SD1,063,380 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band D | 1 mA, continuous or 100 mA, pulsed | Flat Sensor | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 1.08 mm | - | 3.175 mm | N/A | 1.905 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19 mm | - | - | - | |
CY670D-ET1,082,770 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band D | 1 mA, continuous or 100 mA, pulsed | Screw in | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 5.556 mm | - | - | 6-32 | 6.096 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | - | - | |
CY670D-CU1,699,690 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band D | 1 mA, continuous or 100 mA, pulsed | Small Copper bobbin | - | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 4.343 mm | 2.946 mm | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | - | - | - | 7.95 mm | 36 AWG | |
CY670D-CY1,279,620 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 2, 3, 4 | - | Band D | 1 mA, continuous or 100 mA, pulsed | Large copper bobbin | - | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 5.08 mm | 2.997 mm | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | - | - | - | 14.224 mm | 30 AWG | |
CY670D-CO1,464,880 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band D | 1 mA, continuous or 100 mA, pulsed | Clamp style | - | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 11.252 mm | - | 7.925 mm | 4-40 | 5.08 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | - | - | 914.4 mm | - | - | |
CY670C-LR1,383,340 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band C | 1 mA, continuous or 100 mA, pulsed | Half rounded cylinder | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 2.661 mm | - | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | 3.099 mm | - | |
CY670B-MT1,751,190 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band B | 1 mA, continuous or 100 mA, pulsed | Metric screw in | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 5.556 mm | - | - | N/A | 6.096 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | - | - | |
CY670B-SD1,361,660 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band B | 1 mA, continuous or 100 mA, pulsed | Flat Sensor | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 1.08 mm | - | 3.175 mm | N/A | 1.905 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19 mm | - | - | - | |
CY670B-LR1,294,500 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band B | 1 mA, continuous or 100 mA, pulsed | Half rounded cylinder | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 2.661 mm | - | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | 3.099 mm | - | |
CY670B-CY2,335,140 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 2, 3, 4 | - | Band B | 1 mA, continuous or 100 mA, pulsed | Large copper bobbin | - | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 5.08 mm | 2.997 mm | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | - | - | - | 14.224 mm | 30 AWG | |
CY670B-ET1,751,190 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band B | 1 mA, continuous or 100 mA, pulsed | Screw in | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 5.556 mm | - | - | 6-32 | 6.096 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | - | - | |
CY670B-CU1,418,390 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band B | 1 mA, continuous or 100 mA, pulsed | Small Copper bobbin | - | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 4.343 mm | 2.946 mm | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | - | - | - | 7.95 mm | 36 AWG | |
CY670B-BO1,420,260 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | Beryllium oxide heat sink block | Band B | 1 mA, continuous or 100 mA, pulsed | Bolt on | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 3.175 mm | 2.946 mm | 7.62 mm | N/A | 8.89 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | - | - | |
CY670B-CO2,020,180 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band B | 1 mA, continuous or 100 mA, pulsed | Clamp style | - | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 11.252 mm | - | 7.925 mm | 4-40 | 5.08 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | 914.4 mm | - | - | |
CY670A-SD1,952,870 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band A | 1 mA, continuous or 100 mA, pulsed | Flat Sensor | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 1.08 mm | - | 3.175 mm | N/A | 1.905 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19 mm | - | - | - | |
CY670A-LR2,842,010 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band A | 1 mA, continuous or 100 mA, pulsed | Half rounded cylinder | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 2.661 mm | - | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | 3.099 mm | - | |
CY670A-CY3,149,900 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 2, 3, 4 | - | Band A | 1 mA, continuous or 100 mA, pulsed | Large copper bobbin | - | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 5.08 mm | 2.997 mm | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | - | - | 914.4 mm | 14.224 mm | 30 AWG | |
CY670A-ET2,864,610 원9 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band A | 1 mA, continuous or 100 mA, pulsed | Screw in | 2 | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 5.556 mm | - | - | 6-32 | 6.096 mm | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | 0.38 mm | 19.304 mm | - | - | - | |
CY670A-CU2,380,170 원10 weeks리드타임은 상황에 따라 달라질 수 있습니다. | OMEGA Engineering | 1, 2, 3, 4 | - | Band A | 1 mA, continuous or 100 mA, pulsed | Small Copper bobbin | - | Voltage | 226.85 °C | -271.8 °C | 10 µA, ± 0.1% | ± 10 mK @ 4.2 K | 60 V | 4.343 mm | 2.946 mm | - | N/A | - | 16 µW @ 4.2 K; 10 µW @ 77 K; 5 µW @ 300 K | Silicon Diode | SD Model: Typical <10 ms @; 4.2 K, 100 ms @ 77 K, 200 ms ;@ 305 K;BR Model: 1 ms @ 4.2 K, ;13 ms @ 77 K, 20 ms @ 305 K | Not recommended for use in magnetic field applications below 60 K; low magnetic field dependence when used in fields up to 5 tesla above 60 K | Recommended for use only in low level radiation | - | - | - | 7.95 mm | 36 AWG |
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